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Gate Driver Optocoupler

What is a gate driven optocoupler

The gate driven optocoupler is used to provide enhanced electrical insulation between the control circuit and high voltage. Its ability to suppress high common mode noise can prevent misoperation of power semiconductors during high-frequency switching. The highest level of common mode transient durability is 35kV/μ s, which can be used for industrial products with harsh noise environments such as inverters and servo systems.

Characteristics of gate driven optocoupler

Gate driven optocouplers are more suitable for driving power IGBT and MOSFET, and the higher output voltage can meet the gate voltage driving requirements of power devices. The voltage and current are provided by these optocouplers, enabling them to directly drive the IGBT. The gate driven optocoupler is used to provide enhanced electrical insulation between the control circuit and high voltage. Its ability to suppress high common mode noise can prevent misoperation of power semiconductors during high-frequency switching

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Why do we need gate driven optocouplers

In high-power power applications, dedicated drivers are typically required to drive the final stage power transistors. This is because most microcontroller outputs are not optimized for driving power transistors, such as sufficient driving current and driving protection functions. Moreover, directly driving with a microcontroller can lead to drawbacks such as excessive power consumption. Firstly, during the switching process of power transistors, the charging and discharging of gate capacitors will generate high voltage and current at the output terminal. When high voltage and high current coexist, it will cause significant switching losses and reduce power efficiency. Therefore, introducing a driver between the controller and the transistor can effectively amplify the driving signal of the controller, thereby faster charging and discharging of the gate capacitance of the power transistor, shortening the power on time of the power transistor at the gate, reducing

transistor losses, and improving switching efficiency. Secondly, a larger current can increase the switching frequency. With the increase in switching frequency, smaller magnetic devices can be used to reduce costs and product size.

Parameters of gate driven optocoupler

DIP 8 AC Optocoupler Intelligent isolated single channel driver
Input side power supply voltage: 3V to 5.5V
Driver side power supply voltage: maximum withstand voltage of 35V, with UVLO function
Peak 5A/5A pull current capability
High CMTI: 150kV/us
100ns typical propagation delay
100ns maximum pulse width distortion
Accept minimum input pulse width of 40ns
NSI68515LC/UC/AC rail to rail output, NSI68515AC non rail to rail output
NSI68515AC/RC supports automatic reset
Protection mode:
Miller clamp 4.0A
DESAT protection, threshold 6.5V
Support soft turn off function, soft turn off current 140mA
Support alarm feedback
Working temperature: -40 ℃~125 ℃

Our Factory

Founded in 2004, Lighting Ltd. specializes in the packaging of medium- and high-power LED devices for lighting; and moved its factory to Fujian Hutou Optoelectronic Industrial Park in 2017.

In Fujian, we have more than 25,000 square meters of factory buildings and more than 20,000 square meters of ultra-clean, anti-static modern dust-free workshop.

Passed IATF16949, ISO9001, ISO14001, ISO45001 (OHSAS18001) quality management system certification.

Semiconductor packaging business since 2015; own optocoupler brand in 2018; optical sensor product line in 2020; integrated class packaging product line in 2021.

Dozens of invention and utility model patents, many authorized patents.

Responding to the strategic goal of China Chip: cooperating with domestic mainstream brands to actively create integrated products made in China.

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Our Certificate

Product Certifications: ROHS, Reach, VDE, CQC, UL, IATF16949, ISO9001, ISO14001, ISO45001

FAQ

Q: Why do MOSFETs require gate driven optocouplers

A: MOSFET is a voltage controlled device that can be used as a switching element in power circuits, motor drivers, and other systems. The gate is the electrical isolation control terminal of each device. When designing motor drives, protecting personnel operating heavy machinery from electric shock is the primary consideration, followed by efficiency, size, and cost factors. Although IGBTs can handle the high voltage and current required to drive motors, they do not provide safe isolation to prevent electric shock. The important task of providing safe isolation in the system is accomplished by the gate driver that drives the IGBT. The other two ends of MOSFET are the source and drain, while for IGBT, they are called the collector and emitter. To operate MOSFET/IGBT, a voltage is usually applied to the gate (relative to the source/emitter of the device). Use a specialized driver to apply voltage to the gate of the power device and provide driving current. The photoelectric isolation gate driver has been successfully used to drive IGBT and provide current safe isolation. The input stage of the optoelectronic isolation gate driver includes a single aluminum gallium arsenide (AlGaAs) LED. The output stage includes a photodetector and amplifier, followed by pull-up and pull-down transistors that drive the output. The thick layer of transparent silicone resin in the final package separates the input and output stages and provides secure isolation. The simplicity, good noise resistance, and safe isolation of current driven input stages are the main reasons why motor driver manufacturers use optoelectronic isolated gate drivers in almost all designs.

Q: Why do IGBTs require gate driven optocouplers

A: The structure of IGBT/power MOSFET forms a non-linear capacitor at the gate. Charging the gate capacitor will turn on the power device and allow current to flow between its drain and source pins, while discharging will turn off the device, blocking high voltage on the drain and source pins. However, the growing demand for modern systems has surpassed the limitations of optoelectronic isolation technology. For example, common mode transient immunity (CMTI) plays a crucial role in high-power systems with high bus voltage and current. IGBT needs to switch faster to reduce switching losses and lower power consumption. Silicon carbide (SiC) field-effect transistors (FETs) are becoming increasingly popular in these applications because their switching speed is faster than IGBT. Whether using IGBT or SiC FET as power components, faster switching speed means higher transient voltage (dv/dt) and larger common mode transients, which can couple back to the gate driver input and disrupt the gate drive signal of the power component. The minimum voltage at which the gate capacitor charges and the device can conduct is the threshold voltage (VTH). To use IGBT/power MOSFET as a switch, a voltage sufficiently greater than VTH should be applied between the gate and source/emitter pins.

As one of the leading gate driver optocoupler suppliers in China, we warmly welcome you to buy discount gate driver optocoupler from our factory. All customized products are with high quality and competitive price. For quotation and free sample, contact us now.

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