DIP 4 High Voltage Transistor
DIP 4 High Voltage Transistor

DIP 4 High Voltage Transistor

TD851 DIP4 DC InputPhoto Transistor OptocouplerBelong toDIP4 High Voltage Transistor
The TD851 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar high voltage phototransistor detector in a plastic DIP4 package with different lead forming options. With the robust coplanar double mold structure, TD851 series provide the most stable isolation feature.
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Product Parameter (Specification)

 

Features

High isolation 5000 VRMS

DC input with transistor output

Operating temperature range - 55 °C to110 °C

REACH compliance

Halogen free

MSL class 1

Regulatory Approvals

UL - UL1577

VDE - EN60747-5-5(VDE0884-5)

CQC - GB4943.1, GB8898

CUL- CSA Component AcceptanceService Notice No. 5A

 

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

NOTE

INPUT

Forward Current

IF

60

mA

 

Peak Forward Current

IFP

1

A

1

Reverse Voltage

VR

6

V

 

Input Power Dissipation

PI

100

mW

 

OUTPUT

Collector - Emitter Voltage

VCEO

350

V

 

Emitter - Collector Volt

VECO

7

V

 

Collector Current

IC

50

mA

 

Output Power Dissipation

PO

150

mW

 

COMMON

Total Power Dissipation

Ptot

200

mW

 

Isolation Voltage

Viso

5000

Vrms

2

Operating Temperature

Topr

-55~110

°C

 

Storage Temperature

Tstg

-55~125

°C

 

Soldering Temperature

Tsol

260

°C

 

 

ELECTRICAL OPTICAL CHARACTERISTICS at Ta=25°

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

NOTE

INPUT

Forward Voltage

VF

-

1.24

1.4

V

IF=10mA

 

Reverse Current

IR

-

-

10

μA

VR=6V

 

InputCapacitance

Cin

-

10

-

pF

V=0,f=1kHz

 

OUTPUT

Collector Dark Current

ICEO

-

-

100

nA

VCE=10V,IF=0

 

Collector-Emitter Breakdown Voltage

BVCEO

350

-

-

V

IC=0.1mA,IF=0

 

Emitter-Collector Breakdown Voltage

BVECO

7

-

-

V

IE=0.1mA,IF=0

 

TRANSFER CHATACTERISTICS

Current Transfer Ratio

TD851

CTR

50

-

600

%

IF=5mA,VCE=5V

 

Collector-Emitter Saturation Voltage

VCE(sat)

-

0.055

0.4

V

IF=20mA,IC=1mA

 

Isolation Resistance

RISO

10^12

10^14

-

Ω

DC500V,40~60%R.H.

 

Floating Capacitance

CIO

-

0.6

1

pF

V=0,f=1MHz

 

Response Time(Rise)

tr

-

3

18

μs

VCE=2V,IC=10mA

RL=100Ω

3

Response Time(Fall)

tr

-

4

18

μs

3

Cut-off Fraquency

fc

-

80

-

kHz

VCE=2V,IC=10mA

RL=100Ω,-3dB

4

 

Product Feature And Application

 

Switch mode power supplies

Programmable controllers

Household appliances

Office equipment

 

product feature

product feature and application 2

 

In terms of performance, it can replace Everlight EL851, Liteon LTV-851, Ctmicro CT851, Sharp PC851, Toshiba TLP628. Renesas PS2513X-1/PS2513L-1, with a current conversion ratio of 50-600%. It is widely used in switch mode power supplies, smart meters, industrial control, measuring instruments, office equipment (copiers), and household appliances (air conditioning, fans, water heaters);TD851 is widely used in various electronic devices due to its excellent isolation performance and high-speed response characteristics, including but not limited to:
Industrial control: In automation control systems, it is used for signal isolation and transmission to improve system stability and safety.
Communication equipment: In communication systems, it can be used for signal isolation, reducing electromagnetic interference, and ensuring clear transmission of signals.
Medical equipment: In medical electronic devices, high isolation voltage helps protect patients and operators from the risk of electric shock.
Household appliances: In household appliances, they can be used as power management modules to achieve isolation and signal transmission between circuits
 

 

Prodection Details

 

DIP4 High Voltage Transisto

Package Dimensions (Dimensions in mm unless otherwise stated)

prodection details

 

Surface Mount Lead Forming & Surface Mount (Low Profile) Lead Forming 

prodection details 2

 

Prodect Qualification

 

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prodect qualification (5).png

 

Deliver, Shipping And Serving

 

Delivershipingand serving

 

Latest News

 

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product-888-478

 

FAQ

 

1.Characteristics of 851 optocoupler?

It is a optoelectronic coupling device with high-speed response and high voltage resistance characteristics. It adopts advanced optoelectronic technology, which can operate stably at high frequencies and has high voltage resistance. The optocoupler P851 also has advantages such as small size and low power consumption, making it suitable for isolation and transmission applications in various electronic devices.

 

2.Working current of 851 optocoupler?

The working current of 851 is usually between a few milliamperes and a few tens of milliamperes. In practical applications, the selection of working current needs to be determined based on specific application scenarios. A larger working current can improve the photoelectric transmission ratio and response speed, but it can also increase power consumption and heat generation. When selecting the working current, it is necessary to comprehensively consider factors such as power consumption, heat generation, and response speed.

 

3.851 The structure of the photocoupling?

The structure of the 851 optocoupler consists of the light-emitting diode (LED) , which acts as the input part of the OPTOCOUPLER and emits light when a current passes through it. Photodiodes: the output part of a photocoupler that receives light from the light-emitting diode and converts it into electrical signals. Insulation Layer: located between the light-emitting diode and the phototransistor, it acts as electrical insulation to ensure the signal transmission between the two without external interference. Housing: encapsulates the entire optocoupler, protects the internal components and provides electrical connections to the interface.

 

4.Whether the sample for 815 photocoupling is free?

Yes, we can send the samples for free.

 

5.The meaning of the Darlington triode?

The Darlington transistor is a special type of transistor that consists of two transistors, usually of the NPN or PNP type, connected in series. Its main feature is that it has very high current magnification, so it has advantages in some applications.

 

6.How the Darlington triode works?

The input current IB1 flows into the base of the first triode, causing the first triode to turn on, thus generating current IC1 at the collector of the first triode. The collector current IC1 of the first triode flows as input current IB2 to the base of the second triode, enabling the second triode to conduct, thereby generating current IC2 at the collector of the second triode. Because the Darlington transistor consists of two transistors in series, its current magnification is the product of the magnification of each transistor, so the total magnification is very high, usually over 10,000. This gives Darlington transistors good performance in applications where driving current is weak. However, the Darlington transistor also has some disadvantages, such as high output voltage drop, vulnerable to interference and so on. In practical applications, Darlington transistors may or may not be used on demand.

 

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